Single-crystal Si formed on amorphous substrate at low temperature by nanopatterning and nickel-induced lateral crystallization

Single-crystal Si formed on amorphous substrate at low temperature by nanopatterning and nickel-induced lateral crystallization

Single-crystal silicon has been achieved by patterning amorphous silicon film on silicon dioxide substrate into nanoscale lines and nickel-induced lateral crystallization. Line width affects the single-crystal silicon formation significantly. Narrow line widths, 30 nm or less, resulted in little lat...

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Veröffentlicht in:Applied physics letters 2002-08, Vol.81 (6), p.1104-1106
Hauptverfasser: Gu, Jian, Chou, Stephen Y., Yao, Nan, Zandbergen, Henny, Farrer, Jeffrey K.
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container_end_page 1106
container_issue 6
container_start_page 1104
container_title Applied physics letters
container_volume 81
creator Gu, Jian
Chou, Stephen Y.
Yao, Nan
Zandbergen, Henny
Farrer, Jeffrey K.
description Single-crystal silicon has been achieved by patterning amorphous silicon film on silicon dioxide substrate into nanoscale lines and nickel-induced lateral crystallization. Line width affects the single-crystal silicon formation significantly. Narrow line widths, 30 nm or less, resulted in little lateral crystallization; while for line widths above 250 nm, multiple grains started to form. In-situ transmission electron microscope observation has been used to study the crystallization process. Lithography-constrained single seeding is proposed to explain the single-crystal formation.
doi_str_mv 10.1063/1.1498146
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title Single-crystal Si formed on amorphous substrate at low temperature by nanopatterning and nickel-induced lateral crystallization
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