Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire

Molecular-beam epitaxy (MBE) has been utilized to grow Si-doped GaN layers on GaN/sapphire templates prepared by hydride vapor phase epitaxy. An extensive set of characterization techniques is applied to investigate the layers. Positron annihilation experiments indicate that the samples contain open...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2002-07, Vol.92 (2), p.786-792
Hauptverfasser:	Laukkanen, P., Lehkonen, S., Uusimaa, P., Pessa, M., Oila, J., Hautakangas, S., Saarinen, K., Likonen, J., Keränen, J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!