Reversible changes in the lattice site structure for In implanted into GaN
The perturbed angular correlation method was employed to study the lattice environment of In implanted into GaN. It was found, after annealing the implantation induced damage, that 65% of the implanted atoms were situated in regular undisturbed Ga lattice sites. The remaining fraction showed an unus...
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| Veröffentlicht in: | Applied physics letters 2002-06, Vol.80 (24), p.4531-4533 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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