Structural and electrical characterization of AuTiAlTi/AlGaN/GaN ohmic contacts
AuTiAlTi/AlGaN/GaN ohmic contact structures rapid thermal annealed at 650, 750, 850, and 950 °C have been analyzed using complementary transmission electron microscopy and electrical characterization techniques. The relationship between annealing temperature, interfacial microstructure, and contact...
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| Veröffentlicht in: | Journal of applied physics 2002-07, Vol.92 (1), p.94-100 |
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| container_title | Journal of applied physics |
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| creator | Fay, M. W. Moldovan, G. Brown, P. D. Harrison, I. Birbeck, J. C. Hughes, B. T. Uren, M. J. Martin, T. |
| description | AuTiAlTi/AlGaN/GaN ohmic contact structures rapid thermal annealed at 650, 750, 850, and 950 °C have been analyzed using complementary transmission electron microscopy and electrical characterization techniques. The relationship between annealing temperature, interfacial microstructure, and contact resistance is examined. Annealing temperatures of 750 °C or higher are required to produce an ohmic contact. Contacts annealed at 750 and 850 °C show a planar interface between contact and the AlGaN layer, with minimal consumption of the AlGaN and the formation of a thin TiN interfacial layer. Annealing at 950 °C produces the lowest contact resistance, with a structure showing inclusions through the AlGaN/GaN layer. These inclusions are also shown to be a Ti-nitride, having an Al/Au-rich metallurgical barrier layer surrounding them. However, this metallurgical layer does not produce an electrical barrier. |
| doi_str_mv | 10.1063/1.1481960 |
| format | Article |
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W. ; Moldovan, G. ; Brown, P. D. ; Harrison, I. ; Birbeck, J. C. ; Hughes, B. T. ; Uren, M. J. ; Martin, T.</creator><creatorcontrib>Fay, M. W. ; Moldovan, G. ; Brown, P. D. ; Harrison, I. ; Birbeck, J. C. ; Hughes, B. T. ; Uren, M. J. ; Martin, T.</creatorcontrib><description>AuTiAlTi/AlGaN/GaN ohmic contact structures rapid thermal annealed at 650, 750, 850, and 950 °C have been analyzed using complementary transmission electron microscopy and electrical characterization techniques. The relationship between annealing temperature, interfacial microstructure, and contact resistance is examined. Annealing temperatures of 750 °C or higher are required to produce an ohmic contact. Contacts annealed at 750 and 850 °C show a planar interface between contact and the AlGaN layer, with minimal consumption of the AlGaN and the formation of a thin TiN interfacial layer. Annealing at 950 °C produces the lowest contact resistance, with a structure showing inclusions through the AlGaN/GaN layer. 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Contacts annealed at 750 and 850 °C show a planar interface between contact and the AlGaN layer, with minimal consumption of the AlGaN and the formation of a thin TiN interfacial layer. Annealing at 950 °C produces the lowest contact resistance, with a structure showing inclusions through the AlGaN/GaN layer. These inclusions are also shown to be a Ti-nitride, having an Al/Au-rich metallurgical barrier layer surrounding them. 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Contacts annealed at 750 and 850 °C show a planar interface between contact and the AlGaN layer, with minimal consumption of the AlGaN and the formation of a thin TiN interfacial layer. Annealing at 950 °C produces the lowest contact resistance, with a structure showing inclusions through the AlGaN/GaN layer. These inclusions are also shown to be a Ti-nitride, having an Al/Au-rich metallurgical barrier layer surrounding them. However, this metallurgical layer does not produce an electrical barrier.</abstract><doi>10.1063/1.1481960</doi><tpages>7</tpages></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2002-07, Vol.92 (1), p.94-100 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1481960 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Structural and electrical characterization of AuTiAlTi/AlGaN/GaN ohmic contacts |
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