Estimation of the impact of electrostatic discharge on density of states in hydrogenated amorphous silicon thin-film transistors

The objective of this letter is to give an estimation of the impact of an electrostatic discharge (ESD) stress on the density of states (DOS) within the energy gap of hydrogenated amorphous silicon (a-Si:H) thin-film transistors. ESD stresses were applied by means of a transmission line model tester...

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Veröffentlicht in:	Applied physics letters 2002-05, Vol.80 (18), p.3337-3339
Hauptverfasser:	Golo, Natasa Tosic, van der Wal, Siebrigje, Kuper, Fred G., Mouthaan, Ton
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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