Effects of wet-oxidation treatment on Al0.45Ga0.55As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage

We report an AlxGa1−xAs/GaAs heterojunction bipolar transistor (HBT) with a high Al mole fraction of x=0.45. A digital graded superlattice emitter, forming a step-wise graded composition, is used to smooth out the potential spike resulting from a large conduction-band offset. HBT’s with such a digit...

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Veröffentlicht in:	Applied physics letters 2002-05, Vol.80 (18), p.3436-3438
Hauptverfasser:	Lour, Wen-Shiung, Wu, Yen-Wei, Tan, Shih-Wei, Tsai, Ming-Kwen, Yang, Ying-Jay
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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