Simple nondestructive extraction of the vertical channel-impurity profile of small-size metal–oxide–semiconductor field-effect transistors

An improved method for extracting the vertical channel-impurity profile [Nsub(x)] of metal–oxide–semiconductor field-effect transistors (MOSFETs) from measured threshold–voltage dependence on bulk–source voltage is proposed. Previous restriction to slowly varying Nsub(x) is overcome by approximating...

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Veröffentlicht in:	Applied physics letters 2002-04, Vol.80 (16), p.2994-2996
Hauptverfasser:	Mattausch, Hans Jürgen, Suetake, Masami, Kitamaru, Daisuke, Miura-Mattausch, Mitiko, Kumashiro, Shigetaka, Shigyo, Naoyuki, Odanaka, Shinji, Nakayama, Noriaki
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container_title	Applied physics letters
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creator	Mattausch, Hans Jürgen Suetake, Masami Kitamaru, Daisuke Miura-Mattausch, Mitiko Kumashiro, Shigetaka Shigyo, Naoyuki Odanaka, Shinji Nakayama, Noriaki
description	An improved method for extracting the vertical channel-impurity profile [Nsub(x)] of metal–oxide–semiconductor field-effect transistors (MOSFETs) from measured threshold–voltage dependence on bulk–source voltage is proposed. Previous restriction to slowly varying Nsub(x) is overcome by approximating Nsub(x) as a simple analytic function. Application to advanced MOSFETs with steep pileup or retrograded channel profiles and channel length down to 100 nm becomes possible. Extracted analytic profiles are additionally useful for modeling of Nsub(x)-dependent MOSFET phenomena, e.g., the reverse-short-channel effect.
doi_str_mv	10.1063/1.1471381
format	Article
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title	Simple nondestructive extraction of the vertical channel-impurity profile of small-size metal–oxide–semiconductor field-effect transistors
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