Electron-beam-induced optical memory effects in GaN

Metastable effects in unintentionally doped GaN films grown on SiC substrates have been investigated using cathodoluminescence (CL). Memory effect patterns produced optically are observed in CL images. An electron beam can also produce memory effect patterns and the resulting changes in the luminesc...

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Veröffentlicht in:	Applied physics letters 2002-04, Vol.80 (15), p.2675-2677
Hauptverfasser:	Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., Einfeldt, S., Davis, R. F.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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