Hydrogen-defect complexes formed by neutron irradiation of hydrogenated silicon observed by optical absorption measurement
Neutron-irradiation-induced defects in hydrogenated Si were investigated by detecting optical absorption due to their complexes with hydrogen. Specimens were doped with hydrogen by heating in H2 gas at 1300 °C followed by quenching in water. They were then irradiated with neutrons. The optical absor...
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| Veröffentlicht in: | Journal of applied physics 2002-05, Vol.91 (9), p.5831-5839 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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