Carbon deposition in Si as a consequence of H and He irradiations: A systematic study

In the present work we have investigated the influence of different parameters that determine the C deposition on a Si target. Among them we have studied the pressure of the irradiation chamber, the implantation fluence, the current density, the target temperature, the energy of the beam, the charge state of the ion, the ion species and the molecular state of the irradiation beam. In order to determine the quantity of C deposited on the Si substrate we have used the Rutherford backscattering/channeling technique together with the resonant C12(α,α)12C reaction. After careful analysis we arrived at the conclusion that the real independent parameters are the pressure of the irradiation chamber, the temperature of the target, the irradiation time and the electronic stopping power of the ion–target combination.