Attenuated total reflection spectroscopy for infrared analysis of thin layers on a semiconductor substrate

A theoretical analysis based on a perturbation method is used to elucidate the results of attenuated total reflection (ATR) measurements performed on silicon oxide layers of different thicknesses on silicon substrates. This analysis shows that the absorbance ATR spectrum in p polarization is the ima...

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Veröffentlicht in:	Journal of applied physics 2002-04, Vol.91 (8), p.5029-5034
Hauptverfasser:	Rochat, N., Chabli, A., Bertin, F., Olivier, M., Vergnaud, C., Mur, P.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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