Intraband absorption and photocurrent spectroscopy of self-assembled p -type Si/SiGe quantum dots

Intraband absorption and photocurrent spectroscopy of self-assembled p -type Si/SiGe quantum dots

In infrared transmission and photocurrent spectra of self-assembled SiGe quantum dot samples grown in the Stranski–Krastanow mode at temperatures around T=520 °C different types of transitions are observed: in the transmission experiments, an absorption line due to bound-to-bound transitions is meas...

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Veröffentlicht in:Applied physics letters 2002-03, Vol.80 (12), p.2093-2095
Hauptverfasser: Fromherz, T., Mac, W., Hesse, A., Bauer, G., Miesner, C., Brunner, K., Abstreiter, G.
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container_issue 12
container_start_page 2093
container_title Applied physics letters
container_volume 80
creator Fromherz, T.
Mac, W.
Hesse, A.
Bauer, G.
Miesner, C.
Brunner, K.
Abstreiter, G.
description In infrared transmission and photocurrent spectra of self-assembled SiGe quantum dot samples grown in the Stranski–Krastanow mode at temperatures around T=520 °C different types of transitions are observed: in the transmission experiments, an absorption line due to bound-to-bound transitions is measured whereas the photocurrent spectra are determined by bound-to-continuum transitions. The experimental determination of the energies of both types of transitions for the same sample allows a detailed discussion of the features observed in the spectra as well as an estimate of the average Ge content in the dots.
doi_str_mv 10.1063/1.1458531
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title Intraband absorption and photocurrent spectroscopy of self-assembled p -type Si/SiGe quantum dots
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