Extraction of trap states in laser-crystallized polycrystalline-silicon thin-film transistors and analysis of degradation by self-heating

Trap states at the oxide-silicon interface and grain boundary in laser-crystallized polycrystalline-silicon thin-film transistors were extracted. The oxide-silicon interface traps and grain boundary traps can be extracted using the low-frequency capacitance–voltage characteristic and current–voltage...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2002-03, Vol.91 (6), p.3855-3858
Hauptverfasser:	Kimura, Mutsumi, Inoue, Satoshi, Shimoda, Tatsuya, Tam, Simon W.-B., Lui, O. K. Basil, Migliorato, Piero, Nozawa, Ryoichi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!