Metal–insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates

Metal–insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates

The effect of uniaxial stress along the c axis on the metal–insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the...

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Veröffentlicht in:Applied physics letters 2002-01, Vol.80 (4), p.583-585
Hauptverfasser: Muraoka, Y., Hiroi, Z.
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description The effect of uniaxial stress along the c axis on the metal–insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.
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title Metal–insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates
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