Sputtering of Si with decaborane cluster ions

Decaborane cluster ions (B10Hx+) may play an important role in the manufacturing of future semiconductor devices, as they facilitate a very shallow implantation of B with a relatively high beam energy, due to its partition among the constituent atoms. While the formation of B-doped shallow junctions...

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Veröffentlicht in:	Applied physics letters 2002-01, Vol.80 (4), p.592-594
Hauptverfasser:	Sosnowski, Marek, Albano, Maria A., Li, Cheng, Gossmann, Hans-Joachim L., Jacobson, Dale C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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