Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy

The spatial and spectral distribution of photoluminescence from InGaN films grown by plasma-assisted molecular-beam epitaxy are studied by near-field scanning optical microscopy. The luminescence intensity is low in the vicinity of pits in the surface that are believed to be associated with dislocat...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2002-02, Vol.80 (6), p.989-991
Hauptverfasser:	Kim, Jeongyong, Samiee, Kevan, White, Jeffrey O., Myoung, Jae-Min, Kim, Kyekyoon
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!