Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy

Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy

The spatial and spectral distribution of photoluminescence from InGaN films grown by plasma-assisted molecular-beam epitaxy are studied by near-field scanning optical microscopy. The luminescence intensity is low in the vicinity of pits in the surface that are believed to be associated with dislocat...

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Veröffentlicht in:Applied physics letters 2002-02, Vol.80 (6), p.989-991
Hauptverfasser: Kim, Jeongyong, Samiee, Kevan, White, Jeffrey O., Myoung, Jae-Min, Kim, Kyekyoon
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container_title Applied physics letters
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creator Kim, Jeongyong
Samiee, Kevan
White, Jeffrey O.
Myoung, Jae-Min
Kim, Kyekyoon
description The spatial and spectral distribution of photoluminescence from InGaN films grown by plasma-assisted molecular-beam epitaxy are studied by near-field scanning optical microscopy. The luminescence intensity is low in the vicinity of pits in the surface that are believed to be associated with dislocations. For 20% In, the emission is random on a submicron length scale, but clumps into micron-sized regions at 27% In. The clustering is quantified by calculating the image entropy. Near-field spectra indicate that the regions of high intensity are not due to a local increase in In. Spatial variations in the luminescence wavelength indicate that composition fluctuations are enhanced with increasing In.
doi_str_mv 10.1063/1.1446206
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title Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy
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