Patterned growth of single-walled carbon nanotubes on full 4-inch wafers

Patterned growth of single-walled carbon nanotubes (SWNTs) is achieved on full 4-in. SiO2/Si wafers. Catalytic islands with high uniformity over the entire wafer are obtained by a deep ultraviolet photolithography technique. Growth by chemical vapor deposition of methane is found to be very sensitiv...

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Veröffentlicht in:	Applied physics letters 2001-12, Vol.79 (27), p.4571-4573
Hauptverfasser:	Franklin, Nathan R., Li, Yiming, Chen, Robert J., Javey, Ali, Dai, Hongjie
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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