Patterned growth of single-walled carbon nanotubes on full 4-inch wafers
Patterned growth of single-walled carbon nanotubes (SWNTs) is achieved on full 4-in. SiO2/Si wafers. Catalytic islands with high uniformity over the entire wafer are obtained by a deep ultraviolet photolithography technique. Growth by chemical vapor deposition of methane is found to be very sensitiv...
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| Veröffentlicht in: | Applied physics letters 2001-12, Vol.79 (27), p.4571-4573 |
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| container_end_page | 4573 |
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| container_issue | 27 |
| container_start_page | 4571 |
| container_title | Applied physics letters |
| container_volume | 79 |
| creator | Franklin, Nathan R. Li, Yiming Chen, Robert J. Javey, Ali Dai, Hongjie |
| description | Patterned growth of single-walled carbon nanotubes (SWNTs) is achieved on full 4-in. SiO2/Si wafers. Catalytic islands with high uniformity over the entire wafer are obtained by a deep ultraviolet photolithography technique. Growth by chemical vapor deposition of methane is found to be very sensitive to the amount of H2 co-flow. Understanding of the chemistry enables the growth of high quality SWNTs from massive arrays (107–108) of well-defined surface sites. The scale up in patterned nanotube growth shall pave the way to large-scale molecular wire devices. |
| doi_str_mv | 10.1063/1.1429294 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2001-12, Vol.79 (27), p.4571-4573 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1429294 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Patterned growth of single-walled carbon nanotubes on full 4-inch wafers |
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