Hole mobility enhancements in strained Si/Si1−yGey  p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates

We have achieved peak hole mobility enhancement factors of 5.15 over bulk Si in metal-oxide-semiconductor field-effect transistors (MOSFETs) by combining tensile strained Si surface channels and compressively strained 80% Ge buried channels grown on relaxed 50% Ge virtual substrates. To further inve...

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Veröffentlicht in:	Applied physics letters 2001-12, Vol.79 (25), p.4246-4248
Hauptverfasser:	Leitz, C. W., Currie, M. T., Lee, M. L., Cheng, Z.-Y., Antoniadis, D. A., Fitzgerald, E. A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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