Size dependent charge storage effect of the InAs nanodots in Al0.5Ga0.5As/GaAs field-effect diodes

Size dependent charge storage effect of the InAs nanodots in Al0.5Ga0.5As/GaAs field-effect diodes

This article describes size dependent charge storage effect of the InAs nanodots in the barrier layers of Al0.5Ga0.5As/GaAs field-effect diodes. This charging effect is analyzed by a capacitance–voltage (C–V) measurement at 77 K, and results in a clockwise hysteresis loop due to the electron storage...

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Veröffentlicht in:Journal of applied physics 2002-01, Vol.91 (2), p.819-822
Hauptverfasser: Koike, Kazuto, Komai, Hisayoshi, Li, Shuwei, Yano, Mitsuaki
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creator Koike, Kazuto
Komai, Hisayoshi
Li, Shuwei
Yano, Mitsuaki
description This article describes size dependent charge storage effect of the InAs nanodots in the barrier layers of Al0.5Ga0.5As/GaAs field-effect diodes. This charging effect is analyzed by a capacitance–voltage (C–V) measurement at 77 K, and results in a clockwise hysteresis loop due to the electron storage at nanodot potentials. It is revealed that the number of stored electrons is nearly independent of dot size, and the amount of stored charge increases proportionally with dot density. The retention time of the stored charge, however, is deteriorated dramatically by the inclusion of coalesced dots in the storage nodes. These C–V characteristics are in good agreement with their photoluminescence properties.
doi_str_mv 10.1063/1.1420767
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title Size dependent charge storage effect of the InAs nanodots in Al0.5Ga0.5As/GaAs field-effect diodes
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