Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy
Antimony (Sb), an isoelectronic impurity, has been studied as a surfactant during the lateral epitaxial overgrowth (LEO) of gallium nitride (GaN) by metalorganic vapor phase epitaxy (MOVPE). The presence of Sb in the gas phase was found to alter both the LEO growth rates and the predominant facet fo...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2001-11, Vol.79 (19), p.3059-3061 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!