Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator wafer

A scanning charge pumping method using a back channel is proposed for the characterization of interface traps in a silicon-on-insulator (SOI) wafer. In this method, a contactless gate electrode is used instead of the permanent gate electrode of normal metal–oxide–semiconductor transistors, allowing...

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Veröffentlicht in:	Applied physics letters 2001-09, Vol.79 (12), p.1825-1827
Hauptverfasser:	Yoshida, Haruhiko, Sasakura, Hiroshi, Yabuuchi, Tomoyuki, Takami, Toshinori, Uchihashi, Takayuki, Kishino, Seigo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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