Ultrathin PtSi layers patterned by scanned probe lithography

A process for patterning ultrathin layers of PtSi with high spatial resolution is presented. In this process, scanned probe anodic oxidation is used to pattern a surface oxide layer on a H-passivated Si surface. This oxide pattern prevents the reaction of a deposited Pt film with the underlying Si i...

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Veröffentlicht in:	Applied physics letters 2001-08, Vol.79 (8), p.1109-1111
Hauptverfasser:	Snow, E. S., Campbell, P. M., Twigg, M., Perkins, F. K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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