Optical and electrical properties of Al1−xInxN films grown by plasma source molecular-beam epitaxy

Epitaxial Al1−xInxN thin films with 0⩽x⩽1 have been grown by plasma source molecular beam epitaxy on sapphire (0001) substrates at a low temperature of 375 °C. Both reflection high-energy electron diffraction and x-ray diffraction measurements confirm the c-plane growth with the following epitaxial...

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Veröffentlicht in:	Applied physics letters 2001-07, Vol.79 (5), p.632-634
Hauptverfasser:	Lukitsch, M. J., Danylyuk, Y. V., Naik, V. M., Huang, C., Auner, G. W., Rimai, L., Naik, R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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