Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers
We have observed In out diffusion from strained InxGa1−xAs quantum wells into the adjacent GaAs barriers in degraded 980-nm-wavelength strained quantum-well lasers. A previous calculation on misfit stress-induced compositional instability indicates that this material system is stable with respect to...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2001-05, Vol.78 (21), p.3166-3168 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 3168 |
|---|---|
| container_issue | 21 |
| container_start_page | 3166 |
| container_title | Applied physics letters |
| container_volume | 78 |
| creator | Chu, S. N. G. Chand, N. Joyce, W. B. Parayanthal, P. Wilt, D. P. |
| description | We have observed In out diffusion from strained InxGa1−xAs quantum wells into the adjacent GaAs barriers in degraded 980-nm-wavelength strained quantum-well lasers. A previous calculation on misfit stress-induced compositional instability indicates that this material system is stable with respect to misfit strain. Therefore, the out diffusion of In from an InxGa1−xAs quantum well is mainly driven by the compositional discontinuity across the well/barrier heterointerfaces, and is believed to be activated by the nonradiative recombination of injected carriers. |
| doi_str_mv | 10.1063/1.1371967 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1371967</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1371967</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-4ba948e18ad055a43819e8b14b1a5dc1a34b26d750a10fa954352df50447f76d3</originalsourceid><addsrcrecordid>eNotkDFOwzAUQC0EEqEwcAOvDG79YzuOx6iCUKkSC4gx-oltCEocsFNRbsDMETkJIDo9veUNj5BL4EvghVjBEoQGU-gjkgHXmgmA8phknHPBCqPglJyl9PKrKhciI4-1Cy72HbXuKaLFuZ8CHV33jKFPI_VTpKbkNIx0E_Y1wvfn175KqxqrRNMcsQ_O0rcdhnk3snc3DHTA5GI6Jyceh-QuDlyQh5vr-_Ut297Vm3W1ZV1uxMxki0aWDkq0XCmUogTjyhZkC6hsByhkmxdWK47APRolhcqtV1xK7XVhxYJc_Xe7OKUUnW9eYz9i_GiAN39HGmgOR8QPJHJS5Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Chu, S. N. G. ; Chand, N. ; Joyce, W. B. ; Parayanthal, P. ; Wilt, D. P.</creator><creatorcontrib>Chu, S. N. G. ; Chand, N. ; Joyce, W. B. ; Parayanthal, P. ; Wilt, D. P.</creatorcontrib><description>We have observed In out diffusion from strained InxGa1−xAs quantum wells into the adjacent GaAs barriers in degraded 980-nm-wavelength strained quantum-well lasers. A previous calculation on misfit stress-induced compositional instability indicates that this material system is stable with respect to misfit strain. Therefore, the out diffusion of In from an InxGa1−xAs quantum well is mainly driven by the compositional discontinuity across the well/barrier heterointerfaces, and is believed to be activated by the nonradiative recombination of injected carriers.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1371967</identifier><language>eng</language><ispartof>Applied physics letters, 2001-05, Vol.78 (21), p.3166-3168</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-4ba948e18ad055a43819e8b14b1a5dc1a34b26d750a10fa954352df50447f76d3</citedby><cites>FETCH-LOGICAL-c293t-4ba948e18ad055a43819e8b14b1a5dc1a34b26d750a10fa954352df50447f76d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Chu, S. N. G.</creatorcontrib><creatorcontrib>Chand, N.</creatorcontrib><creatorcontrib>Joyce, W. B.</creatorcontrib><creatorcontrib>Parayanthal, P.</creatorcontrib><creatorcontrib>Wilt, D. P.</creatorcontrib><title>Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers</title><title>Applied physics letters</title><description>We have observed In out diffusion from strained InxGa1−xAs quantum wells into the adjacent GaAs barriers in degraded 980-nm-wavelength strained quantum-well lasers. A previous calculation on misfit stress-induced compositional instability indicates that this material system is stable with respect to misfit strain. Therefore, the out diffusion of In from an InxGa1−xAs quantum well is mainly driven by the compositional discontinuity across the well/barrier heterointerfaces, and is believed to be activated by the nonradiative recombination of injected carriers.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNotkDFOwzAUQC0EEqEwcAOvDG79YzuOx6iCUKkSC4gx-oltCEocsFNRbsDMETkJIDo9veUNj5BL4EvghVjBEoQGU-gjkgHXmgmA8phknHPBCqPglJyl9PKrKhciI4-1Cy72HbXuKaLFuZ8CHV33jKFPI_VTpKbkNIx0E_Y1wvfn175KqxqrRNMcsQ_O0rcdhnk3snc3DHTA5GI6Jyceh-QuDlyQh5vr-_Ut297Vm3W1ZV1uxMxki0aWDkq0XCmUogTjyhZkC6hsByhkmxdWK47APRolhcqtV1xK7XVhxYJc_Xe7OKUUnW9eYz9i_GiAN39HGmgOR8QPJHJS5Q</recordid><startdate>20010521</startdate><enddate>20010521</enddate><creator>Chu, S. N. G.</creator><creator>Chand, N.</creator><creator>Joyce, W. B.</creator><creator>Parayanthal, P.</creator><creator>Wilt, D. P.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20010521</creationdate><title>Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers</title><author>Chu, S. N. G. ; Chand, N. ; Joyce, W. B. ; Parayanthal, P. ; Wilt, D. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-4ba948e18ad055a43819e8b14b1a5dc1a34b26d750a10fa954352df50447f76d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chu, S. N. G.</creatorcontrib><creatorcontrib>Chand, N.</creatorcontrib><creatorcontrib>Joyce, W. B.</creatorcontrib><creatorcontrib>Parayanthal, P.</creatorcontrib><creatorcontrib>Wilt, D. P.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chu, S. N. G.</au><au>Chand, N.</au><au>Joyce, W. B.</au><au>Parayanthal, P.</au><au>Wilt, D. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers</atitle><jtitle>Applied physics letters</jtitle><date>2001-05-21</date><risdate>2001</risdate><volume>78</volume><issue>21</issue><spage>3166</spage><epage>3168</epage><pages>3166-3168</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We have observed In out diffusion from strained InxGa1−xAs quantum wells into the adjacent GaAs barriers in degraded 980-nm-wavelength strained quantum-well lasers. A previous calculation on misfit stress-induced compositional instability indicates that this material system is stable with respect to misfit strain. Therefore, the out diffusion of In from an InxGa1−xAs quantum well is mainly driven by the compositional discontinuity across the well/barrier heterointerfaces, and is believed to be activated by the nonradiative recombination of injected carriers.</abstract><doi>10.1063/1.1371967</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2001-05, Vol.78 (21), p.3166-3168 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1371967 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T19%3A01%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Generic%20degradation%20mechanism%20for%20980%20nm%20InxGa1%E2%88%92xAs/GaAs%20strained%20quantum-well%20lasers&rft.jtitle=Applied%20physics%20letters&rft.au=Chu,%20S.%20N.%20G.&rft.date=2001-05-21&rft.volume=78&rft.issue=21&rft.spage=3166&rft.epage=3168&rft.pages=3166-3168&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1371967&rft_dat=%3Ccrossref%3E10_1063_1_1371967%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |