Growth of aligned carbon nanotubes by biasing during growth

Well aligned multiwalled carbon nanotube (CNT) growth was achieved by positively biasing the substrate during growth. Growth was performed in a flowing mixture of 7% CH4 in Ar onto Co covered Si held at 800 °C with and without the presence of an electric field. High resolution scanning electron micr...

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Veröffentlicht in:	Applied physics letters 2001-04, Vol.78 (16), p.2291-2293
Hauptverfasser:	Avigal, Y., Kalish, R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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