In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation

In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation

The temperature of encapsulated green and ultraviolet light emitting diodes (LEDs) in operation has been measured optically via the ruby R lines emitted by the residual Cr3+ contaminations in the sapphire substrate. These two photoluminescent R lines, which are excited by the electroluminescence of...

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Veröffentlicht in:Journal of applied physics 2001-03, Vol.89 (6), p.3091-3094
Hauptverfasser: Winnewisser, C., Schneider, J., Börsch, M., Rotter, H. W.
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container_end_page 3094
container_issue 6
container_start_page 3091
container_title Journal of applied physics
container_volume 89
creator Winnewisser, C.
Schneider, J.
Börsch, M.
Rotter, H. W.
description The temperature of encapsulated green and ultraviolet light emitting diodes (LEDs) in operation has been measured optically via the ruby R lines emitted by the residual Cr3+ contaminations in the sapphire substrate. These two photoluminescent R lines, which are excited by the electroluminescence of the LED itself, show a well-characterized line shift as a function of temperature and pressure. The temperature is found to rise linearly with the applied forward current of the LED at a rate of ≈1 K/mA. This optical temperature measurement based on monitoring the two ruby R lines could qualify as a sensitive method for an in situ temperature sensor for other sapphire substrate based semiconductor devices such as laser diodes and field effect transistors.
doi_str_mv 10.1063/1.1349858
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1349858</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1349858</sourcerecordid><originalsourceid>FETCH-LOGICAL-c227t-55ccdd8472c35e76172904cd61253a50d431599603181670dea663fe697e89793</originalsourceid><addsrcrecordid>eNotUEtLAzEYDKJgrR78B7l62Jpvs3kdpWhbKAqi5yW7-baNdB8kWaH-erfa0zAwD2YIuQe2ACb5IyyAF0YLfUFmwLTJlBDskswYyyHTRplrchPjF2MAmpsZ-dl0NPo00oTtgMGmMSBt0cYJW-xSpN_e0jBWR_pOD77DSPuGRjsMez8p41jFNLmQVjaio5tuZV8n3W6fKLY-Jd_tqPO9m3xuDCfW_9X4vrslV409RLw745x8vjx_LNfZ9m21WT5tszrPVcqEqGvndKHymgtUElRuWFE7CbngVjBXcBDGSMZBg1TMoZWSNyiNwtNgPicP_7l16GMM2JRD8K0NxxJYeTqthPJ8Gv8FzZFfrA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation</title><source>American Institute of Physics (AIP) Journals</source><source>AIP_美国物理联合会期刊回溯（NSTL购买）</source><creator>Winnewisser, C. ; Schneider, J. ; Börsch, M. ; Rotter, H. W.</creator><creatorcontrib>Winnewisser, C. ; Schneider, J. ; Börsch, M. ; Rotter, H. W.</creatorcontrib><description>The temperature of encapsulated green and ultraviolet light emitting diodes (LEDs) in operation has been measured optically via the ruby R lines emitted by the residual Cr3+ contaminations in the sapphire substrate. These two photoluminescent R lines, which are excited by the electroluminescence of the LED itself, show a well-characterized line shift as a function of temperature and pressure. The temperature is found to rise linearly with the applied forward current of the LED at a rate of ≈1 K/mA. This optical temperature measurement based on monitoring the two ruby R lines could qualify as a sensitive method for an in situ temperature sensor for other sapphire substrate based semiconductor devices such as laser diodes and field effect transistors.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1349858</identifier><language>eng</language><ispartof>Journal of applied physics, 2001-03, Vol.89 (6), p.3091-3094</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c227t-55ccdd8472c35e76172904cd61253a50d431599603181670dea663fe697e89793</citedby><cites>FETCH-LOGICAL-c227t-55ccdd8472c35e76172904cd61253a50d431599603181670dea663fe697e89793</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Winnewisser, C.</creatorcontrib><creatorcontrib>Schneider, J.</creatorcontrib><creatorcontrib>Börsch, M.</creatorcontrib><creatorcontrib>Rotter, H. W.</creatorcontrib><title>In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation</title><title>Journal of applied physics</title><description>The temperature of encapsulated green and ultraviolet light emitting diodes (LEDs) in operation has been measured optically via the ruby R lines emitted by the residual Cr3+ contaminations in the sapphire substrate. These two photoluminescent R lines, which are excited by the electroluminescence of the LED itself, show a well-characterized line shift as a function of temperature and pressure. The temperature is found to rise linearly with the applied forward current of the LED at a rate of ≈1 K/mA. This optical temperature measurement based on monitoring the two ruby R lines could qualify as a sensitive method for an in situ temperature sensor for other sapphire substrate based semiconductor devices such as laser diodes and field effect transistors.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNotUEtLAzEYDKJgrR78B7l62Jpvs3kdpWhbKAqi5yW7-baNdB8kWaH-erfa0zAwD2YIuQe2ACb5IyyAF0YLfUFmwLTJlBDskswYyyHTRplrchPjF2MAmpsZ-dl0NPo00oTtgMGmMSBt0cYJW-xSpN_e0jBWR_pOD77DSPuGRjsMez8p41jFNLmQVjaio5tuZV8n3W6fKLY-Jd_tqPO9m3xuDCfW_9X4vrslV409RLw745x8vjx_LNfZ9m21WT5tszrPVcqEqGvndKHymgtUElRuWFE7CbngVjBXcBDGSMZBg1TMoZWSNyiNwtNgPicP_7l16GMM2JRD8K0NxxJYeTqthPJ8Gv8FzZFfrA</recordid><startdate>20010315</startdate><enddate>20010315</enddate><creator>Winnewisser, C.</creator><creator>Schneider, J.</creator><creator>Börsch, M.</creator><creator>Rotter, H. W.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20010315</creationdate><title>In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation</title><author>Winnewisser, C. ; Schneider, J. ; Börsch, M. ; Rotter, H. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-55ccdd8472c35e76172904cd61253a50d431599603181670dea663fe697e89793</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Winnewisser, C.</creatorcontrib><creatorcontrib>Schneider, J.</creatorcontrib><creatorcontrib>Börsch, M.</creatorcontrib><creatorcontrib>Rotter, H. W.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Winnewisser, C.</au><au>Schneider, J.</au><au>Börsch, M.</au><au>Rotter, H. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation</atitle><jtitle>Journal of applied physics</jtitle><date>2001-03-15</date><risdate>2001</risdate><volume>89</volume><issue>6</issue><spage>3091</spage><epage>3094</epage><pages>3091-3094</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The temperature of encapsulated green and ultraviolet light emitting diodes (LEDs) in operation has been measured optically via the ruby R lines emitted by the residual Cr3+ contaminations in the sapphire substrate. These two photoluminescent R lines, which are excited by the electroluminescence of the LED itself, show a well-characterized line shift as a function of temperature and pressure. The temperature is found to rise linearly with the applied forward current of the LED at a rate of ≈1 K/mA. This optical temperature measurement based on monitoring the two ruby R lines could qualify as a sensitive method for an in situ temperature sensor for other sapphire substrate based semiconductor devices such as laser diodes and field effect transistors.</abstract><doi>10.1063/1.1349858</doi><tpages>4</tpages></addata></record>
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source American Institute of Physics (AIP) Journals; AIP_美国物理联合会期刊回溯（NSTL购买）
title In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T14%3A42%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=In%20situ%20temperature%20measurements%20via%20ruby%20R%20lines%20of%20sapphire%20substrate%20based%20InGaN%20light%20emitting%20diodes%20during%20operation&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Winnewisser,%20C.&rft.date=2001-03-15&rft.volume=89&rft.issue=6&rft.spage=3091&rft.epage=3094&rft.pages=3091-3094&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1349858&rft_dat=%3Ccrossref%3E10_1063_1_1349858%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true