BeCdSe as a ternary alloy for blue-green optoelectronic applications
Bulk BeCdSe layer lattice-matched to a GaAs substrate, as well as a BeCdSe/ZnSe quantum well (QW) structure have been grown using the submonolayer digital alloying mode of molecular beam epitaxy. The structures have demonstrated bright photoluminescence up to room temperature and good structural qua...
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| Veröffentlicht in: | Applied physics letters 2001-01, Vol.78 (4), p.404-406 |
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| container_title | Applied physics letters |
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| creator | Ivanov, S. V. Nekrutkina, O. V. Sorokin, S. V. Kaygorodov, V. A. Shubina, T. V. Toropov, A. A. Kop’ev, P. S. Reuscher, G. Wagner, V. Geurts, J. Waag, A. Landwehr, G. |
| description | Bulk BeCdSe layer lattice-matched to a GaAs substrate, as well as a BeCdSe/ZnSe quantum well (QW) structure have been grown using the submonolayer digital alloying mode of molecular beam epitaxy. The structures have demonstrated bright photoluminescence up to room temperature and good structural quality. Stimulated emission under optical pumping has been obtained for a 2 nm BeCdSe/ZnSe multiple QW structure at 80 K. The bowing parameter of the energy gap of this ternary alloy has been estimated as about 4.5 eV. |
| doi_str_mv | 10.1063/1.1342202 |
| format | Article |
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V.</creatorcontrib><creatorcontrib>Sorokin, S. V.</creatorcontrib><creatorcontrib>Kaygorodov, V. A.</creatorcontrib><creatorcontrib>Shubina, T. V.</creatorcontrib><creatorcontrib>Toropov, A. A.</creatorcontrib><creatorcontrib>Kop’ev, P. S.</creatorcontrib><creatorcontrib>Reuscher, G.</creatorcontrib><creatorcontrib>Wagner, V.</creatorcontrib><creatorcontrib>Geurts, J.</creatorcontrib><creatorcontrib>Waag, A.</creatorcontrib><creatorcontrib>Landwehr, G.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ivanov, S. V.</au><au>Nekrutkina, O. V.</au><au>Sorokin, S. V.</au><au>Kaygorodov, V. A.</au><au>Shubina, T. V.</au><au>Toropov, A. A.</au><au>Kop’ev, P. S.</au><au>Reuscher, G.</au><au>Wagner, V.</au><au>Geurts, J.</au><au>Waag, A.</au><au>Landwehr, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>BeCdSe as a ternary alloy for blue-green optoelectronic applications</atitle><jtitle>Applied physics letters</jtitle><date>2001-01-22</date><risdate>2001</risdate><volume>78</volume><issue>4</issue><spage>404</spage><epage>406</epage><pages>404-406</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Bulk BeCdSe layer lattice-matched to a GaAs substrate, as well as a BeCdSe/ZnSe quantum well (QW) structure have been grown using the submonolayer digital alloying mode of molecular beam epitaxy. The structures have demonstrated bright photoluminescence up to room temperature and good structural quality. Stimulated emission under optical pumping has been obtained for a 2 nm BeCdSe/ZnSe multiple QW structure at 80 K. 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| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2001-01, Vol.78 (4), p.404-406 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1342202 |
| source | AIP Journals; AIP Digital Archive |
| title | BeCdSe as a ternary alloy for blue-green optoelectronic applications |
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