Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers

A correlation between bulk leakage current density and threading dislocation density in silicon–germanium mesa-isolated diodes fabricated on relaxed graded buffer layers is presented. Si0.75Ge0.25 p-i-n diodes were grown on SiGe graded buffers with different grading rates. Graded buffers with differ...

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Veröffentlicht in:	Applied physics letters 2001-01, Vol.78 (4), p.541-543
Hauptverfasser:	Giovane, Laura M., Luan, Hsin-Chiao, Agarwal, Anuradha M., Kimerling, Lionel C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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