Quantum dot infrared photodetectors
Self-assembled strained semiconductor nanostructures have been grown on GaAs substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence experiments have been used to probe the zero-dimensional states and revealed four atomic-like shells (s,p,d,f) with an excitonic i...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2001-01, Vol.78 (1), p.79-81 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 81 |
|---|---|
| container_issue | 1 |
| container_start_page | 79 |
| container_title | Applied physics letters |
| container_volume | 78 |
| creator | Liu, H. C. Gao, M. McCaffrey, J. Wasilewski, Z. R. Fafard, S. |
| description | Self-assembled strained semiconductor nanostructures have been grown on GaAs substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence experiments have been used to probe the zero-dimensional states and revealed four atomic-like shells (s,p,d,f) with an excitonic intersublevel energy spacing which was adjusted to ∼60 meV. The lower electronic shells were populated with carriers by n doping the heterostructure, and transitions from the occupied quantum dot states to the wetting layer or to the continuum states resulted in infrared photodetection. We demonstrate broadband normal-incidence detection with a responsivity of a few hundred mA/W at a detection wavelength of ∼5 μm. |
| doi_str_mv | 10.1063/1.1337649 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1337649</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1337649</sourcerecordid><originalsourceid>FETCH-LOGICAL-c358t-5608794dee10f81afded6046a5aa69a5d8588f99794e5707b9e7119a5f13bcdb3</originalsourceid><addsrcrecordid>eNotj01LAzEURYMoOFYX_oMBVy5S3_NNvpZStAoFKdR1yExesGI7JUkX_ntH7OpyuYcLR4hbhDmCpgecI5HRnTsTDYIxkhDtuWgAgKR2Ci_FVSlfU1WPRI24Wx_Dvh53bRxru92nHDLH9vA51jFy5aGOuVyLixS-C9-cciY-Xp43i1e5el--LZ5WciBlq1QarHFdZEZIFkOKHDV0OqgQtAsqWmVtcm5iWBkwvWODOA0JqR9iTzNx__875LGUzMkf8nYX8o9H8H92Hv3Jjn4BxPJAtw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Quantum dot infrared photodetectors</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Liu, H. C. ; Gao, M. ; McCaffrey, J. ; Wasilewski, Z. R. ; Fafard, S.</creator><creatorcontrib>Liu, H. C. ; Gao, M. ; McCaffrey, J. ; Wasilewski, Z. R. ; Fafard, S.</creatorcontrib><description>Self-assembled strained semiconductor nanostructures have been grown on GaAs substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence experiments have been used to probe the zero-dimensional states and revealed four atomic-like shells (s,p,d,f) with an excitonic intersublevel energy spacing which was adjusted to ∼60 meV. The lower electronic shells were populated with carriers by n doping the heterostructure, and transitions from the occupied quantum dot states to the wetting layer or to the continuum states resulted in infrared photodetection. We demonstrate broadband normal-incidence detection with a responsivity of a few hundred mA/W at a detection wavelength of ∼5 μm.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1337649</identifier><language>eng</language><ispartof>Applied physics letters, 2001-01, Vol.78 (1), p.79-81</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-5608794dee10f81afded6046a5aa69a5d8588f99794e5707b9e7119a5f13bcdb3</citedby><cites>FETCH-LOGICAL-c358t-5608794dee10f81afded6046a5aa69a5d8588f99794e5707b9e7119a5f13bcdb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Liu, H. C.</creatorcontrib><creatorcontrib>Gao, M.</creatorcontrib><creatorcontrib>McCaffrey, J.</creatorcontrib><creatorcontrib>Wasilewski, Z. R.</creatorcontrib><creatorcontrib>Fafard, S.</creatorcontrib><title>Quantum dot infrared photodetectors</title><title>Applied physics letters</title><description>Self-assembled strained semiconductor nanostructures have been grown on GaAs substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence experiments have been used to probe the zero-dimensional states and revealed four atomic-like shells (s,p,d,f) with an excitonic intersublevel energy spacing which was adjusted to ∼60 meV. The lower electronic shells were populated with carriers by n doping the heterostructure, and transitions from the occupied quantum dot states to the wetting layer or to the continuum states resulted in infrared photodetection. We demonstrate broadband normal-incidence detection with a responsivity of a few hundred mA/W at a detection wavelength of ∼5 μm.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNotj01LAzEURYMoOFYX_oMBVy5S3_NNvpZStAoFKdR1yExesGI7JUkX_ntH7OpyuYcLR4hbhDmCpgecI5HRnTsTDYIxkhDtuWgAgKR2Ci_FVSlfU1WPRI24Wx_Dvh53bRxru92nHDLH9vA51jFy5aGOuVyLixS-C9-cciY-Xp43i1e5el--LZ5WciBlq1QarHFdZEZIFkOKHDV0OqgQtAsqWmVtcm5iWBkwvWODOA0JqR9iTzNx__875LGUzMkf8nYX8o9H8H92Hv3Jjn4BxPJAtw</recordid><startdate>20010101</startdate><enddate>20010101</enddate><creator>Liu, H. C.</creator><creator>Gao, M.</creator><creator>McCaffrey, J.</creator><creator>Wasilewski, Z. R.</creator><creator>Fafard, S.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20010101</creationdate><title>Quantum dot infrared photodetectors</title><author>Liu, H. C. ; Gao, M. ; McCaffrey, J. ; Wasilewski, Z. R. ; Fafard, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-5608794dee10f81afded6046a5aa69a5d8588f99794e5707b9e7119a5f13bcdb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, H. C.</creatorcontrib><creatorcontrib>Gao, M.</creatorcontrib><creatorcontrib>McCaffrey, J.</creatorcontrib><creatorcontrib>Wasilewski, Z. R.</creatorcontrib><creatorcontrib>Fafard, S.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, H. C.</au><au>Gao, M.</au><au>McCaffrey, J.</au><au>Wasilewski, Z. R.</au><au>Fafard, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantum dot infrared photodetectors</atitle><jtitle>Applied physics letters</jtitle><date>2001-01-01</date><risdate>2001</risdate><volume>78</volume><issue>1</issue><spage>79</spage><epage>81</epage><pages>79-81</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Self-assembled strained semiconductor nanostructures have been grown on GaAs substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence experiments have been used to probe the zero-dimensional states and revealed four atomic-like shells (s,p,d,f) with an excitonic intersublevel energy spacing which was adjusted to ∼60 meV. The lower electronic shells were populated with carriers by n doping the heterostructure, and transitions from the occupied quantum dot states to the wetting layer or to the continuum states resulted in infrared photodetection. We demonstrate broadband normal-incidence detection with a responsivity of a few hundred mA/W at a detection wavelength of ∼5 μm.</abstract><doi>10.1063/1.1337649</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2001-01, Vol.78 (1), p.79-81 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1337649 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Quantum dot infrared photodetectors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T05%3A49%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Quantum%20dot%20infrared%20photodetectors&rft.jtitle=Applied%20physics%20letters&rft.au=Liu,%20H.%20C.&rft.date=2001-01-01&rft.volume=78&rft.issue=1&rft.spage=79&rft.epage=81&rft.pages=79-81&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1337649&rft_dat=%3Ccrossref%3E10_1063_1_1337649%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |