Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications

Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications

We report on the growth, fabrication, and device characterization of NbN internally shunted Josephson junctions with a TaNx barrier. The resistivity of TaNx films could be varied from a few hundred micro-ohms to a few hundred milliohms by increasing the N2 pressure during reactive sputtering. The te...

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Veröffentlicht in:Applied physics letters 2001-01, Vol.78 (1), p.99-101
Hauptverfasser: Kaul, Anupama B., Whiteley, Stephen R., Van Duzer, Theodore, Yu, Lei, Newman, Nathan, Rowell, John M.
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container_end_page 101
container_issue 1
container_start_page 99
container_title Applied physics letters
container_volume 78
creator Kaul, Anupama B.
Whiteley, Stephen R.
Van Duzer, Theodore
Yu, Lei
Newman, Nathan
Rowell, John M.
description We report on the growth, fabrication, and device characterization of NbN internally shunted Josephson junctions with a TaNx barrier. The resistivity of TaNx films could be varied from a few hundred micro-ohms to a few hundred milliohms by increasing the N2 pressure during reactive sputtering. The temperature dependence of IcRn of the junctions with ∼13 mΩ cm barrier resistivity was measured for various barrier thicknesses. The coherence length of the barrier was determined to be 5 nm. By adjusting the barrier thickness, IcRn values >500 μV were observed up to 8.3 K, with Ic and Rn of magnitudes that are suitable for single-flux-quantum digital circuits.
doi_str_mv 10.1063/1.1337630
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title Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications
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