Strong blue emission from As doped GaN grown by molecular beam epitaxy

Arsenic doped GaN grown by molecular beam epitaxy has been studied by room temperature photoluminescence. In addition to the wurzite band edge transition, luminescence from the cubic phase and very strong blue emission at ∼2.6 eV are observed. The intensities of the blue and the cubic band edge emis...

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Veröffentlicht in:	Applied physics letters 2000-10, Vol.77 (16), p.2506-2508
Hauptverfasser:	Winser, A. J., Novikov, S. V., Davis, C. S., Cheng, T. S., Foxon, C. T., Harrison, I.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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