Tunnel switch diode based on AlSb/GaSb heterojunctions
We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic “S” shaped current–voltage curve was found to occur for structures with AlSb barriers less...
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Veröffentlicht in: | Journal of applied physics 2000-12, Vol.88 (11), p.6948-6950 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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