Temperature dependence of low-frequency noise in Al–Al2O3–Al single-electron transistors

We have measured the temperature dependence of the charge noise power spectral density Sq in two-junction Al–Al2O3–Al single-electron transistors at temperatures from 85 mK to 4 K. Although individual Lorentzians are often visible, the noise spectra are dominated by excess low-frequency noise with a...

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Veröffentlicht in:	Journal of applied physics 2000-12, Vol.88 (11), p.6536-6540
Hauptverfasser:	Kenyon, M., Lobb, C. J., Wellstood, F. C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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