Thermal expansion of bulk and homoepitaxial GaN

The thermal behavior of Mg-doped and intentionally undoped bulk crystals and homoepitaxial GaN was investigated in a wide temperature range from 12 to 600 K. With high-resolution x-ray diffraction, both lattice parameters a and c were determined and the thermal expansion coefficients were calculated...

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Veröffentlicht in:	Applied physics letters 2000-09, Vol.77 (10), p.1434-1436
Hauptverfasser:	Kirchner, V., Heinke, H., Hommel, D., Domagala, J. Z., Leszczynski, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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