Thermal expansion of bulk and homoepitaxial GaN
The thermal behavior of Mg-doped and intentionally undoped bulk crystals and homoepitaxial GaN was investigated in a wide temperature range from 12 to 600 K. With high-resolution x-ray diffraction, both lattice parameters a and c were determined and the thermal expansion coefficients were calculated...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2000-09, Vol.77 (10), p.1434-1436 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1436 |
|---|---|
| container_issue | 10 |
| container_start_page | 1434 |
| container_title | Applied physics letters |
| container_volume | 77 |
| creator | Kirchner, V. Heinke, H. Hommel, D. Domagala, J. Z. Leszczynski, M. |
| description | The thermal behavior of Mg-doped and intentionally undoped bulk crystals and homoepitaxial GaN was investigated in a wide temperature range from 12 to 600 K. With high-resolution x-ray diffraction, both lattice parameters a and c were determined and the thermal expansion coefficients were calculated. Within the experimental accuracy, mean values were extracted for the temperature ranges 12–100, 100–250, and 250–600 K. These values are essential, especially, for the interpretation of measurements of other GaN properties performed at low temperatures. |
| doi_str_mv | 10.1063/1.1290491 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1290491</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1290491</sourcerecordid><originalsourceid>FETCH-LOGICAL-c227t-138fb78e7f07ef6e76b0edee99ccddefce13d3422a9cb11fa23fe769fcfeb4593</originalsourceid><addsrcrecordid>eNotj81Kw0AURgdRMLYufINsXaSdOzfJZJZStApFN-16mJncS6P5I1Ohvr0Ru_r44HDgCPEAcgWyxDWsQBmZG7gSCUitMwSorkUipcSsNAXcirsYP-dbKMRErPdHmjrXpnQeXR-boU8HTv13-5W6vk6PQzfQ2JzcuZmZrXtfiht2baT7yy7E4eV5v3nNdh_bt83TLgtK6VMGWLHXFWmWmrgkXXpJNZExIdQ1cSDAGnOlnAkegJ1CniHDgcnnhcGFePz3hmmIcSK249R0bvqxIO1fqQV7KcVfmWlGBg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Thermal expansion of bulk and homoepitaxial GaN</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Kirchner, V. ; Heinke, H. ; Hommel, D. ; Domagala, J. Z. ; Leszczynski, M.</creator><creatorcontrib>Kirchner, V. ; Heinke, H. ; Hommel, D. ; Domagala, J. Z. ; Leszczynski, M.</creatorcontrib><description>The thermal behavior of Mg-doped and intentionally undoped bulk crystals and homoepitaxial GaN was investigated in a wide temperature range from 12 to 600 K. With high-resolution x-ray diffraction, both lattice parameters a and c were determined and the thermal expansion coefficients were calculated. Within the experimental accuracy, mean values were extracted for the temperature ranges 12–100, 100–250, and 250–600 K. These values are essential, especially, for the interpretation of measurements of other GaN properties performed at low temperatures.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1290491</identifier><language>eng</language><ispartof>Applied physics letters, 2000-09, Vol.77 (10), p.1434-1436</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c227t-138fb78e7f07ef6e76b0edee99ccddefce13d3422a9cb11fa23fe769fcfeb4593</citedby><cites>FETCH-LOGICAL-c227t-138fb78e7f07ef6e76b0edee99ccddefce13d3422a9cb11fa23fe769fcfeb4593</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kirchner, V.</creatorcontrib><creatorcontrib>Heinke, H.</creatorcontrib><creatorcontrib>Hommel, D.</creatorcontrib><creatorcontrib>Domagala, J. Z.</creatorcontrib><creatorcontrib>Leszczynski, M.</creatorcontrib><title>Thermal expansion of bulk and homoepitaxial GaN</title><title>Applied physics letters</title><description>The thermal behavior of Mg-doped and intentionally undoped bulk crystals and homoepitaxial GaN was investigated in a wide temperature range from 12 to 600 K. With high-resolution x-ray diffraction, both lattice parameters a and c were determined and the thermal expansion coefficients were calculated. Within the experimental accuracy, mean values were extracted for the temperature ranges 12–100, 100–250, and 250–600 K. These values are essential, especially, for the interpretation of measurements of other GaN properties performed at low temperatures.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotj81Kw0AURgdRMLYufINsXaSdOzfJZJZStApFN-16mJncS6P5I1Ohvr0Ru_r44HDgCPEAcgWyxDWsQBmZG7gSCUitMwSorkUipcSsNAXcirsYP-dbKMRErPdHmjrXpnQeXR-boU8HTv13-5W6vk6PQzfQ2JzcuZmZrXtfiht2baT7yy7E4eV5v3nNdh_bt83TLgtK6VMGWLHXFWmWmrgkXXpJNZExIdQ1cSDAGnOlnAkegJ1CniHDgcnnhcGFePz3hmmIcSK249R0bvqxIO1fqQV7KcVfmWlGBg</recordid><startdate>20000904</startdate><enddate>20000904</enddate><creator>Kirchner, V.</creator><creator>Heinke, H.</creator><creator>Hommel, D.</creator><creator>Domagala, J. Z.</creator><creator>Leszczynski, M.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000904</creationdate><title>Thermal expansion of bulk and homoepitaxial GaN</title><author>Kirchner, V. ; Heinke, H. ; Hommel, D. ; Domagala, J. Z. ; Leszczynski, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-138fb78e7f07ef6e76b0edee99ccddefce13d3422a9cb11fa23fe769fcfeb4593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kirchner, V.</creatorcontrib><creatorcontrib>Heinke, H.</creatorcontrib><creatorcontrib>Hommel, D.</creatorcontrib><creatorcontrib>Domagala, J. Z.</creatorcontrib><creatorcontrib>Leszczynski, M.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kirchner, V.</au><au>Heinke, H.</au><au>Hommel, D.</au><au>Domagala, J. Z.</au><au>Leszczynski, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal expansion of bulk and homoepitaxial GaN</atitle><jtitle>Applied physics letters</jtitle><date>2000-09-04</date><risdate>2000</risdate><volume>77</volume><issue>10</issue><spage>1434</spage><epage>1436</epage><pages>1434-1436</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The thermal behavior of Mg-doped and intentionally undoped bulk crystals and homoepitaxial GaN was investigated in a wide temperature range from 12 to 600 K. With high-resolution x-ray diffraction, both lattice parameters a and c were determined and the thermal expansion coefficients were calculated. Within the experimental accuracy, mean values were extracted for the temperature ranges 12–100, 100–250, and 250–600 K. These values are essential, especially, for the interpretation of measurements of other GaN properties performed at low temperatures.</abstract><doi>10.1063/1.1290491</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2000-09, Vol.77 (10), p.1434-1436 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1290491 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Thermal expansion of bulk and homoepitaxial GaN |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T14%3A30%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Thermal%20expansion%20of%20bulk%20and%20homoepitaxial%20GaN&rft.jtitle=Applied%20physics%20letters&rft.au=Kirchner,%20V.&rft.date=2000-09-04&rft.volume=77&rft.issue=10&rft.spage=1434&rft.epage=1436&rft.pages=1434-1436&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1290491&rft_dat=%3Ccrossref%3E10_1063_1_1290491%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |