Radiotracer identification of a Ta-related deep level in 4H–SiC
To identify tantalum-related deep levels, deep level transient spectroscopy (DLTS) measurements were performed on Ta-implanted n-type 4H–silicon carbide. The DLTS spectra of samples implanted with stable Ta181 exhibit one dominating peak representing a trap energy of about ET=EC−0.67 eV. Due to supe...
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| Veröffentlicht in: | Journal of applied physics 2000-09, Vol.88 (6), p.3260-3265 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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