Temperature dependence of capacitance/current–voltage characteristics of highly (0001)-oriented YMnO3 thin films on Si

Temperature dependence of capacitance/current–voltage characteristics of highly (0001)-oriented YMnO3 thin films on Si

Highly (0001)-oriented YMnO3 thin films on Si(100) substrates were obtained by using a stable precursor solution and rapid thermal annealing at a low temperature of 650 °C in a chemical solution deposition process. Temperature-dependent capacitance–voltage (C–V) and current–voltage (I–V) characteris...

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Veröffentlicht in:Applied physics letters 2000-08, Vol.77 (7), p.1044-1046
Hauptverfasser: Yi, Woo-Chul, Seo, Chang-Su, Kwun, Sook-Il, Yoon, Jong-Gul
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container_issue 7
container_start_page 1044
container_title Applied physics letters
container_volume 77
creator Yi, Woo-Chul
Seo, Chang-Su
Kwun, Sook-Il
Yoon, Jong-Gul
description Highly (0001)-oriented YMnO3 thin films on Si(100) substrates were obtained by using a stable precursor solution and rapid thermal annealing at a low temperature of 650 °C in a chemical solution deposition process. Temperature-dependent capacitance–voltage (C–V) and current–voltage (I–V) characteristics were discussed in a metal-ferroelectric-semiconductor structure. At 300 K, the voltage-dependent increase of the memory window (ΔV) in the C–V curve and the asymmetric I–V curve were attributed to the formation of positive interfacial charges by field- and thermal-excited electron transport. On the other hand, at 220 K, the voltage-independent ΔV was attributed to ferroelectric polarization switching.
doi_str_mv 10.1063/1.1289067
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title Temperature dependence of capacitance/current–voltage characteristics of highly (0001)-oriented YMnO3 thin films on Si
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