Discrete energy level separation and the threshold temperature dependence of quantum dot lasers
Data are presented on one- and two-stack InAs quantum dot lasers that have reduced temperature sensitivity of their lasing threshold. Adjustment of dot size and composition is used to increase the energy separation between the ground and first excited radiative transition energies to 104 meV, with a...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2000-07, Vol.77 (4), p.466-468 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 468 |
---|---|
container_issue | 4 |
container_start_page | 466 |
container_title | Applied physics letters |
container_volume | 77 |
creator | Shchekin, Oleg B. Park, Gyoungwon Huffaker, Diana L. Deppe, Dennis G. |
description | Data are presented on one- and two-stack InAs quantum dot lasers that have reduced temperature sensitivity of their lasing threshold. Adjustment of dot size and composition is used to increase the energy separation between the ground and first excited radiative transition energies to 104 meV, with a dot density of ∼3.1×1010 cm−2. The one- and two-stack lasers show broad area as-cleaved room temperature threshold current densities as low as 43 and 35 A/cm2, respectively. The wide energy separation between the ground and first excited radiative transitions leads to significant improvements in the temperature sensitivity of threshold. |
doi_str_mv | 10.1063/1.127012 |
format | Article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_127012</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_127012</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-6fc815978ab5790d8642d48767c8c797269162e72ba714228e00e96fcdc4e4a73</originalsourceid><addsrcrecordid>eNotkE1LxDAYhIMoWFfBn5Cjl655kzYfR1l1FRa86Dlkk7dupV8mqbD_3sp6GIaHYeYwhNwCWwOT4h7WwBUDfkYKYEqVAkCfk4IxJkppargkVyl9LVhzIQpiH9vkI2akOGD8PNIOf7CjCScXXW7Hgboh0HzARRHTYewWwn7CJZ0j0oATDgEHj3Rs6Pfshjz3NIyZdi5hTNfkonFdwpt_X5GP56f3zUu5e9u-bh52pecGcikbr6E2Srt9rQwLWlY8VFpJ5bVXRnFpQHJUfO8UVJxrZAzN0gq-wsopsSJ3p10fx5QiNnaKbe_i0QKzf8dYsKdjxC8lZVXe</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Discrete energy level separation and the threshold temperature dependence of quantum dot lasers</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Shchekin, Oleg B. ; Park, Gyoungwon ; Huffaker, Diana L. ; Deppe, Dennis G.</creator><creatorcontrib>Shchekin, Oleg B. ; Park, Gyoungwon ; Huffaker, Diana L. ; Deppe, Dennis G.</creatorcontrib><description>Data are presented on one- and two-stack InAs quantum dot lasers that have reduced temperature sensitivity of their lasing threshold. Adjustment of dot size and composition is used to increase the energy separation between the ground and first excited radiative transition energies to 104 meV, with a dot density of ∼3.1×1010 cm−2. The one- and two-stack lasers show broad area as-cleaved room temperature threshold current densities as low as 43 and 35 A/cm2, respectively. The wide energy separation between the ground and first excited radiative transitions leads to significant improvements in the temperature sensitivity of threshold.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.127012</identifier><language>eng</language><ispartof>Applied physics letters, 2000-07, Vol.77 (4), p.466-468</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-6fc815978ab5790d8642d48767c8c797269162e72ba714228e00e96fcdc4e4a73</citedby><cites>FETCH-LOGICAL-c291t-6fc815978ab5790d8642d48767c8c797269162e72ba714228e00e96fcdc4e4a73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Shchekin, Oleg B.</creatorcontrib><creatorcontrib>Park, Gyoungwon</creatorcontrib><creatorcontrib>Huffaker, Diana L.</creatorcontrib><creatorcontrib>Deppe, Dennis G.</creatorcontrib><title>Discrete energy level separation and the threshold temperature dependence of quantum dot lasers</title><title>Applied physics letters</title><description>Data are presented on one- and two-stack InAs quantum dot lasers that have reduced temperature sensitivity of their lasing threshold. Adjustment of dot size and composition is used to increase the energy separation between the ground and first excited radiative transition energies to 104 meV, with a dot density of ∼3.1×1010 cm−2. The one- and two-stack lasers show broad area as-cleaved room temperature threshold current densities as low as 43 and 35 A/cm2, respectively. The wide energy separation between the ground and first excited radiative transitions leads to significant improvements in the temperature sensitivity of threshold.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotkE1LxDAYhIMoWFfBn5Cjl655kzYfR1l1FRa86Dlkk7dupV8mqbD_3sp6GIaHYeYwhNwCWwOT4h7WwBUDfkYKYEqVAkCfk4IxJkppargkVyl9LVhzIQpiH9vkI2akOGD8PNIOf7CjCScXXW7Hgboh0HzARRHTYewWwn7CJZ0j0oATDgEHj3Rs6Pfshjz3NIyZdi5hTNfkonFdwpt_X5GP56f3zUu5e9u-bh52pecGcikbr6E2Srt9rQwLWlY8VFpJ5bVXRnFpQHJUfO8UVJxrZAzN0gq-wsopsSJ3p10fx5QiNnaKbe_i0QKzf8dYsKdjxC8lZVXe</recordid><startdate>20000724</startdate><enddate>20000724</enddate><creator>Shchekin, Oleg B.</creator><creator>Park, Gyoungwon</creator><creator>Huffaker, Diana L.</creator><creator>Deppe, Dennis G.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000724</creationdate><title>Discrete energy level separation and the threshold temperature dependence of quantum dot lasers</title><author>Shchekin, Oleg B. ; Park, Gyoungwon ; Huffaker, Diana L. ; Deppe, Dennis G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-6fc815978ab5790d8642d48767c8c797269162e72ba714228e00e96fcdc4e4a73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shchekin, Oleg B.</creatorcontrib><creatorcontrib>Park, Gyoungwon</creatorcontrib><creatorcontrib>Huffaker, Diana L.</creatorcontrib><creatorcontrib>Deppe, Dennis G.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shchekin, Oleg B.</au><au>Park, Gyoungwon</au><au>Huffaker, Diana L.</au><au>Deppe, Dennis G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Discrete energy level separation and the threshold temperature dependence of quantum dot lasers</atitle><jtitle>Applied physics letters</jtitle><date>2000-07-24</date><risdate>2000</risdate><volume>77</volume><issue>4</issue><spage>466</spage><epage>468</epage><pages>466-468</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Data are presented on one- and two-stack InAs quantum dot lasers that have reduced temperature sensitivity of their lasing threshold. Adjustment of dot size and composition is used to increase the energy separation between the ground and first excited radiative transition energies to 104 meV, with a dot density of ∼3.1×1010 cm−2. The one- and two-stack lasers show broad area as-cleaved room temperature threshold current densities as low as 43 and 35 A/cm2, respectively. The wide energy separation between the ground and first excited radiative transitions leads to significant improvements in the temperature sensitivity of threshold.</abstract><doi>10.1063/1.127012</doi><tpages>3</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0003-6951 |
ispartof | Applied physics letters, 2000-07, Vol.77 (4), p.466-468 |
issn | 0003-6951 1077-3118 |
language | eng |
recordid | cdi_crossref_primary_10_1063_1_127012 |
source | AIP Journals Complete; AIP Digital Archive |
title | Discrete energy level separation and the threshold temperature dependence of quantum dot lasers |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T08%3A10%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Discrete%20energy%20level%20separation%20and%20the%20threshold%20temperature%20dependence%20of%20quantum%20dot%20lasers&rft.jtitle=Applied%20physics%20letters&rft.au=Shchekin,%20Oleg%20B.&rft.date=2000-07-24&rft.volume=77&rft.issue=4&rft.spage=466&rft.epage=468&rft.pages=466-468&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.127012&rft_dat=%3Ccrossref%3E10_1063_1_127012%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |