Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions

We report on photoassisted wet chemical formation of thin oxide films on n-GaN layers in potassium hydroxide based electrolytes at room temperature. The kinetics of the oxide formation and dissolution were examined via photocurrent transients. The tendency of the photocurrent to level out during pho...

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Veröffentlicht in:	Applied physics letters 2000-06, Vol.76 (26), p.3923-3925
Hauptverfasser:	Rotter, T., Mistele, D., Stemmer, J., Fedler, F., Aderhold, J., Graul, J., Schwegler, V., Kirchner, C., Kamp, M., Heuken, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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