Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions
We report on photoassisted wet chemical formation of thin oxide films on n-GaN layers in potassium hydroxide based electrolytes at room temperature. The kinetics of the oxide formation and dissolution were examined via photocurrent transients. The tendency of the photocurrent to level out during pho...
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| Veröffentlicht in: | Applied physics letters 2000-06, Vol.76 (26), p.3923-3925 |
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| container_end_page | 3925 |
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| container_issue | 26 |
| container_start_page | 3923 |
| container_title | Applied physics letters |
| container_volume | 76 |
| creator | Rotter, T. Mistele, D. Stemmer, J. Fedler, F. Aderhold, J. Graul, J. Schwegler, V. Kirchner, C. Kamp, M. Heuken, M. |
| description | We report on photoassisted wet chemical formation of thin oxide films on n-GaN layers in potassium hydroxide based electrolytes at room temperature. The kinetics of the oxide formation and dissolution were examined via photocurrent transients. The tendency of the photocurrent to level out during photoelectrochemical etching experiments is associated with a quasiequilibrium state at the semiconductor/electrolyte interface. Homogeneous oxide films were grown in weak alkaline solutions (11 |
| doi_str_mv | 10.1063/1.126822 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_126822</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_126822</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-57821c921937f77c540f2e3fcd9f8acda6b495699568caf34c2b20d20b17f0243</originalsourceid><addsrcrecordid>eNotkE1LxDAYhIMoWFfBn5Cjl6x537RNc5RFV2FRET2XNB8a7TZL0oL77-2ywgzDwDCHh5Br4EvgtbiFJWDdIJ6QAriUTAA0p6TgnAtWqwrOyUXO33OtUIiCvL1-xTGGwU7GWRp_g3XUh35LfUxbPYY40FkDZeN-5-haP9M8Ja-Ny3TKYfikuv_RfRgczbGfDvt8Sc687rO7-s8F-Xi4f189ss3L-ml1t2EGFYyskg2CUQhKSC-lqUru0QlvrPKNNlbXXamqWs1ujPaiNNght8g7kJ5jKRbk5vhrUsw5Od_uUtjqtG-BtwcWLbRHFuIP0UhQ1g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Rotter, T. ; Mistele, D. ; Stemmer, J. ; Fedler, F. ; Aderhold, J. ; Graul, J. ; Schwegler, V. ; Kirchner, C. ; Kamp, M. ; Heuken, M.</creator><creatorcontrib>Rotter, T. ; Mistele, D. ; Stemmer, J. ; Fedler, F. ; Aderhold, J. ; Graul, J. ; Schwegler, V. ; Kirchner, C. ; Kamp, M. ; Heuken, M.</creatorcontrib><description>We report on photoassisted wet chemical formation of thin oxide films on n-GaN layers in potassium hydroxide based electrolytes at room temperature. The kinetics of the oxide formation and dissolution were examined via photocurrent transients. The tendency of the photocurrent to level out during photoelectrochemical etching experiments is associated with a quasiequilibrium state at the semiconductor/electrolyte interface. Homogeneous oxide films were grown in weak alkaline solutions (11<pH<13) under potentionstatic control with oxidation rates of up to 250 nm/h and characterized by Auger electron spectroscopy. Consequences on wet photochemical etch strategies are discussed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.126822</identifier><language>eng</language><ispartof>Applied physics letters, 2000-06, Vol.76 (26), p.3923-3925</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-57821c921937f77c540f2e3fcd9f8acda6b495699568caf34c2b20d20b17f0243</citedby><cites>FETCH-LOGICAL-c291t-57821c921937f77c540f2e3fcd9f8acda6b495699568caf34c2b20d20b17f0243</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Rotter, T.</creatorcontrib><creatorcontrib>Mistele, D.</creatorcontrib><creatorcontrib>Stemmer, J.</creatorcontrib><creatorcontrib>Fedler, F.</creatorcontrib><creatorcontrib>Aderhold, J.</creatorcontrib><creatorcontrib>Graul, J.</creatorcontrib><creatorcontrib>Schwegler, V.</creatorcontrib><creatorcontrib>Kirchner, C.</creatorcontrib><creatorcontrib>Kamp, M.</creatorcontrib><creatorcontrib>Heuken, M.</creatorcontrib><title>Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions</title><title>Applied physics letters</title><description>We report on photoassisted wet chemical formation of thin oxide films on n-GaN layers in potassium hydroxide based electrolytes at room temperature. The kinetics of the oxide formation and dissolution were examined via photocurrent transients. The tendency of the photocurrent to level out during photoelectrochemical etching experiments is associated with a quasiequilibrium state at the semiconductor/electrolyte interface. Homogeneous oxide films were grown in weak alkaline solutions (11<pH<13) under potentionstatic control with oxidation rates of up to 250 nm/h and characterized by Auger electron spectroscopy. Consequences on wet photochemical etch strategies are discussed.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotkE1LxDAYhIMoWFfBn5Cjl6x537RNc5RFV2FRET2XNB8a7TZL0oL77-2ywgzDwDCHh5Br4EvgtbiFJWDdIJ6QAriUTAA0p6TgnAtWqwrOyUXO33OtUIiCvL1-xTGGwU7GWRp_g3XUh35LfUxbPYY40FkDZeN-5-haP9M8Ja-Ny3TKYfikuv_RfRgczbGfDvt8Sc687rO7-s8F-Xi4f189ss3L-ml1t2EGFYyskg2CUQhKSC-lqUru0QlvrPKNNlbXXamqWs1ujPaiNNght8g7kJ5jKRbk5vhrUsw5Od_uUtjqtG-BtwcWLbRHFuIP0UhQ1g</recordid><startdate>20000626</startdate><enddate>20000626</enddate><creator>Rotter, T.</creator><creator>Mistele, D.</creator><creator>Stemmer, J.</creator><creator>Fedler, F.</creator><creator>Aderhold, J.</creator><creator>Graul, J.</creator><creator>Schwegler, V.</creator><creator>Kirchner, C.</creator><creator>Kamp, M.</creator><creator>Heuken, M.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000626</creationdate><title>Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions</title><author>Rotter, T. ; Mistele, D. ; Stemmer, J. ; Fedler, F. ; Aderhold, J. ; Graul, J. ; Schwegler, V. ; Kirchner, C. ; Kamp, M. ; Heuken, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-57821c921937f77c540f2e3fcd9f8acda6b495699568caf34c2b20d20b17f0243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rotter, T.</creatorcontrib><creatorcontrib>Mistele, D.</creatorcontrib><creatorcontrib>Stemmer, J.</creatorcontrib><creatorcontrib>Fedler, F.</creatorcontrib><creatorcontrib>Aderhold, J.</creatorcontrib><creatorcontrib>Graul, J.</creatorcontrib><creatorcontrib>Schwegler, V.</creatorcontrib><creatorcontrib>Kirchner, C.</creatorcontrib><creatorcontrib>Kamp, M.</creatorcontrib><creatorcontrib>Heuken, M.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rotter, T.</au><au>Mistele, D.</au><au>Stemmer, J.</au><au>Fedler, F.</au><au>Aderhold, J.</au><au>Graul, J.</au><au>Schwegler, V.</au><au>Kirchner, C.</au><au>Kamp, M.</au><au>Heuken, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions</atitle><jtitle>Applied physics letters</jtitle><date>2000-06-26</date><risdate>2000</risdate><volume>76</volume><issue>26</issue><spage>3923</spage><epage>3925</epage><pages>3923-3925</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report on photoassisted wet chemical formation of thin oxide films on n-GaN layers in potassium hydroxide based electrolytes at room temperature. The kinetics of the oxide formation and dissolution were examined via photocurrent transients. The tendency of the photocurrent to level out during photoelectrochemical etching experiments is associated with a quasiequilibrium state at the semiconductor/electrolyte interface. Homogeneous oxide films were grown in weak alkaline solutions (11<pH<13) under potentionstatic control with oxidation rates of up to 250 nm/h and characterized by Auger electron spectroscopy. Consequences on wet photochemical etch strategies are discussed.</abstract><doi>10.1063/1.126822</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2000-06, Vol.76 (26), p.3923-3925 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions |
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