Raman scattering study of Ga1−xMnxN crystals

Raman spectra of Ga1−xMnxN crystals grown by the resublimation method have been investigated. New bands around 300 and 667 cm−1, as well as a broad structure near 600 cm−1, not observed in undoped GaN have been found. The temperature dependence of major Raman bands has been measured. The simple mode...

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Veröffentlicht in:	Applied physics letters 2000-06, Vol.76 (26), p.3870-3872
Hauptverfasser:	Gebicki, W., Strzeszewski, J., Kamler, G., Szyszko, T., Podsiadło, S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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