Raman scattering study of Ga1−xMnxN crystals

Raman scattering study of Ga1−xMnxN crystals

Raman spectra of Ga1−xMnxN crystals grown by the resublimation method have been investigated. New bands around 300 and 667 cm−1, as well as a broad structure near 600 cm−1, not observed in undoped GaN have been found. The temperature dependence of major Raman bands has been measured. The simple mode...

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Veröffentlicht in:Applied physics letters 2000-06, Vol.76 (26), p.3870-3872
Hauptverfasser: Gebicki, W., Strzeszewski, J., Kamler, G., Szyszko, T., Podsiadło, S.
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container_issue 26
container_start_page 3870
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creator Gebicki, W.
Strzeszewski, J.
Kamler, G.
Szyszko, T.
Podsiadło, S.
description Raman spectra of Ga1−xMnxN crystals grown by the resublimation method have been investigated. New bands around 300 and 667 cm−1, as well as a broad structure near 600 cm−1, not observed in undoped GaN have been found. The temperature dependence of major Raman bands has been measured. The simple model of GaN lattice dynamics has been presented, and the observed bands have been assigned to disorder-activated phonon modes, in good agreement with the calculated phonon density of states.
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title Raman scattering study of Ga1−xMnxN crystals
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