70+ μm deep domain inversion in X -cut LiNbO3 and its use in a high-speed bandpass integrated-optic modulator

70+ μm deep domain inversion in X -cut LiNbO3 and its use in a high-speed bandpass integrated-optic modulator

A deep domain inversion (DI) technique for X-cut LiNbO3 is reported. DI regions as deep as 70 μm, i.e., deep enough for virtually any guided-wave application, were obtained by electric-field poling, with even deeper DI regions possible. As an application of the DI technique, a bandpass traveling-wav...

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Veröffentlicht in:Applied physics letters 2000-06, Vol.76 (26), p.3852-3854
Hauptverfasser: Kishino, Tetsuya, Tavlykaev, Robert F., Ramaswamy, Ramu V.
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Tavlykaev, Robert F.
Ramaswamy, Ramu V.
description A deep domain inversion (DI) technique for X-cut LiNbO3 is reported. DI regions as deep as 70 μm, i.e., deep enough for virtually any guided-wave application, were obtained by electric-field poling, with even deeper DI regions possible. As an application of the DI technique, a bandpass traveling-wave Mach–Zehnder modulator is demonstrated with a 15 GHz bandwidth centered at 21 GHz.
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title 70+ μm deep domain inversion in X -cut LiNbO3 and its use in a high-speed bandpass integrated-optic modulator
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