Low resistance Ti/Pt/Au ohmic contacts to p -type GaN

Low resistance Ti/Pt/Au ohmic contacts to p -type GaN

Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (NA=3.0×1017 cm−3) are reported. Linear current–voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700 °C. The best ohmic contacts were obtained after annealin...

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Veröffentlicht in:Applied physics letters 2000-06, Vol.76 (23), p.3451-3453
Hauptverfasser: Zhou, L., Lanford, W., Ping, A. T., Adesida, I., Yang, J. W., Khan, A.
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container_end_page 3453
container_issue 23
container_start_page 3451
container_title Applied physics letters
container_volume 76
creator Zhou, L.
Lanford, W.
Ping, A. T.
Adesida, I.
Yang, J. W.
Khan, A.
description Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (NA=3.0×1017 cm−3) are reported. Linear current–voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700 °C. The best ohmic contacts were obtained after annealing in a N2 ambient at 800 °C for 2 min. These contacts exhibited a specific contact resistance Rc of 4.2×10−5 Ω cm2 and contact resistivity ρc of 21 Ω mm. Possible mechanisms for the lower contact resistivity of Ti/Pt/Au contacts are discussed. The processing for the Ti/Pt/Au ohmic contacts is compatible with routine fabrication steps for GaN devices.
doi_str_mv 10.1063/1.126674
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title Low resistance Ti/Pt/Au ohmic contacts to p -type GaN
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