Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

Electron holography has been used to image electrostatic potential variations across an AlGaN/InGaN/AlGaN heterojunction diode. Features in the energy profile have been interpreted in terms of the expected built-in voltage across the p-n junction of the diode as well as contributions from the sponta...

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Veröffentlicht in:	Applied physics letters 2000-05, Vol.76 (21), p.3055-3057
Hauptverfasser:	McCartney, M. R., Ponce, F. A., Cai, Juan, Bour, D. P.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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