Local transport and trapping issues in Al2O3 gate oxide structures

The bias dependence of interfacial barriers in Al2O3-based metal–oxide–semiconductor structures was studied by ballistic electron emission spectroscopy. Strong image force reductions of the barriers were observed. A conduction band offset between Al2O3 and Si of 2.78 eV was obtained. Electron trappi...

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Veröffentlicht in:	Applied physics letters 2000-05, Vol.76 (20), p.2886-2888
Hauptverfasser:	Ludeke, R., Cuberes, M. T., Cartier, E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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