Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy

Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to investigate the properties of Au/GaN interfaces. The effects of in situ and ex situ annealing on the starting GaN surface were examined, with the aim of increasing the surprisingly low value of interface electron transm...

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Veröffentlicht in:	Applied physics letters 2000-03, Vol.76 (13), p.1725-1727
Hauptverfasser:	Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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