Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy

Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy

Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to investigate the properties of Au/GaN interfaces. The effects of in situ and ex situ annealing on the starting GaN surface were examined, with the aim of increasing the surprisingly low value of interface electron transm...

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Veröffentlicht in:Applied physics letters 2000-03, Vol.76 (13), p.1725-1727
Hauptverfasser: Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J.
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container_end_page 1727
container_issue 13
container_start_page 1725
container_title Applied physics letters
container_volume 76
creator Bell, L. D.
Smith, R. P.
McDermott, B. T.
Gertner, E. R.
Pittman, R.
Pierson, R. L.
Sullivan, G. J.
description Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to investigate the properties of Au/GaN interfaces. The effects of in situ and ex situ annealing on the starting GaN surface were examined, with the aim of increasing the surprisingly low value of interface electron transmission observed in previous BEEM measurements. BEEM imaging and spectroscopy have demonstrated that much higher, more uniform transmission across the Au/GaN interface can be achieved. However, while methods were identified that increase transmission by more than an order of magnitude, BEEM spectroscopy indicates that annealing can substantially alter the Schottky barrier height. These barrier height changes at moderate temperatures are attributed to vacancy diffusion.
doi_str_mv 10.1063/1.126148
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title Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy
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